Title :
Sputtered TiN performance as an anti-reflective coating in backend sub-um i-line lithography process
Author :
Chen, S. ; Chen, C.L. ; Tsou, Samuel
Author_Institution :
Process Dev. Dept., Winbond Electron. Corp., Hsinchu, Taiwan
Abstract :
With scaling, the need for reliable metal interconnect is growing rapidly to prevent the electromigration failure. One of the major factors that influence EM failure is the notched metal line which stems from reflective notching in photo processing. This work presents the use of TiN as an ARC layer in sub-μm process which has achieved a production worthy status
Keywords :
VLSI; aluminium; antireflection coatings; electromigration; metallisation; photolithography; reliability; sputtered coatings; titanium compounds; 365 nm; ARC layer; TiN; ULSI; UV lithography; anti-reflective coating; backend processing; electromigration prevention; i-line lithography process; multilevel interconnection; notched metal line; photo processing; production worthy status; reflective notching; reliable metal interconnect; sub-μm process; submicron lithography; Coatings; Etching; Geometry; Lithography; Polymers; Reflectivity; Resists; Strips; Surface topography; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153035
