DocumentCode
2379648
Title
Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping
Author
Huang, Yi-Chiau ; Li, Jiping ; Jin, Miao ; Wood, Bingxi ; Sanchez, Errol ; Kim, Yihwan
Author_Institution
Appl. Mater., Inc., Sunnyvale, CA, USA
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
2
Abstract
This paper presented the selective epitaxial germanium growth on silicon by trench filling and doping. The process operated in a reaction rate limited regime at a low temperature (350°C to 400°C) to ensure reasonable growth rate, decent surface morphology, and high dopant incorporation in Ge.
Keywords
boron; doping profiles; elemental semiconductors; epitaxial growth; germanium; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface morphology; Ge:B; Ge:P; Si; in situ doping; selective epitaxial germanium growth; surface morphology; temperature 350 degC to 400 degC; trench filling; Annealing; Arrays; Conductivity; Doping; MOSFETs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location
Berkeley, CA
Print_ISBN
978-1-4577-1864-9
Electronic_ISBN
978-1-4577-1863-2
Type
conf
DOI
10.1109/ISTDM.2012.6222456
Filename
6222456
Link To Document