DocumentCode
237970
Title
Analysis and design of complex impedance transforming marchand baluns
Author
Michaelsen, Rasmus S. ; Johansen, Tom K. ; Tamborg, Kjeld M.
Author_Institution
Dept. of Electr. Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2014
fDate
16-18 June 2014
Firstpage
1
Lastpage
4
Abstract
A new type of Marchand balun is presented in this paper, which has the property of complex impedance transformation. To allow the Marchand balun to transform between arbitrary complex impedances, three reactances should be added to the circuit. A detailed analysis of the circuit gives the governing equations. To verify the theory, a design and electromagnetic simulation of a lumped element Marchand balun is made in a SiGe BiCMOS technology. The lumped element impementation is favorable because capacitors are placed where the additional reactances should be added. Thus it is possible to absorb a positive reactance by reducing a capacitor. At the design frequency of 10.5 GHz it matches 50Ω to 50 - j66Ω. It has an insertion loss of 5.1 dB, an input reflection of -20.8 dB, as well as phase and magnitude imbalance better than 0.2° and 0.12 dB, respectively.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MMIC; baluns; electric impedance; BiCMOS technology; SiGe; arbitrary complex impedances; complex impedance transformation; electromagnetic simulation; frequency 10.5 GHz; insertion loss; lumped element Marchand balun; magnitude imbalance; positive reactance; Capacitors; Impedance; Impedance matching; Integrated circuit modeling; Mathematical model; Microwave theory and techniques; Ports (Computers); Balun; Complex impedance transformation; MMIC; Marchand balun;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on
Conference_Location
Gdansk
Print_ISBN
978-617-607-553-0
Type
conf
DOI
10.1109/MIKON.2014.6899854
Filename
6899854
Link To Document