Title :
Band-Edge Electronic States, and Pre-Existing Defects in Remote Plasma Deposited (RPD) GeO2 and SiO2
Author :
Lucovsky, Gerald ; Wu, Kun ; Whitten, Jerry L. ; Papas, Brian
Author_Institution :
Dept. of Phys., NC State Univ., Raleigh, NC, USA
Abstract :
Two issues are addressed: (i) X-ray spectroscopic studies of RPD-SiO2 and RPD GeO2, include band edge states and pre-existing defects, each in the OK edge spectrum, and (ii) interpretation of these X-ray absorption spectroscopy to identify band edge states and intrinsic defects. (iii) These provide a basis for interpretation of electrical data associated with band edge electrically active singlet state defects.
Keywords :
X-ray absorption spectra; defect states; energy gap; germanium compounds; plasma deposition; silicon compounds; GeO2; OK edge spectrum; RPD; SiO2; X-ray absorption spectroscopy; band edge electrically active singlet state defects; band-edge electronic states; electrical data; intrinsic defects; pre-existing defects; remote plasma deposition; Absorption; Annealing; Films; Plasmas; Silicon; Spectroscopy; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222460
