Title :
Effect of nitrogen containing underlayers on aluminum electromigration
Author :
Jain, Vivek ; Pramanik, Dipankar
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
Electromigration performance of Al-1% Cu films deposited on TiW underlayer have been studied. Role of nitrogen impurity in the underlying TiW film on electromigration has been investigated. The study shows that increasing nitrogen content in the underlayer results in worse electromigration performance
Keywords :
VLSI; aluminium alloys; copper alloys; electromigration; metallisation; nitrogen; titanium compounds; Al-Cu metallisation; AlCu-TiW:N; TiW underlayer; VLSI; electromigration performance; multilevel interconnection; role of impurities; Aluminum; Annealing; Conducting materials; Current density; Electromigration; Impurities; Nitrogen; Optical films; Temperature; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153036
