Title :
SiGe Nanoring Formation
Author :
Tu, Wen-Hsien ; Huang, S.-H. ; Liu, C.W.
Author_Institution :
Grad. Inst. of Electron. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The SiGe quantum dots and nanorings are grown at 500°C by UHVCVD. TEM images show the grown quantum dots with epi-Si layer from SiH4/H2 and SiH4/He, respectively. The epi-Si deposited by SiH4 and H2 cannot cap the quantum dots, but SiH4 and He can form the Si cap.
Keywords :
chemical vapour deposition; germanium alloys; molecular beam epitaxial growth; nanofabrication; nanostructured materials; semiconductor growth; semiconductor materials; semiconductor quantum dots; silicon alloys; transmission electron microscopy; vacuum deposition; SiGe; SiGe nanoring formation; TEM images; UHVCVD; epi-Si layer deposition; quantum dot growth; temperature 500 degC; Annealing; Educational institutions; Electrical engineering; Helium; Quantum dots; Silicon; Silicon germanium;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222463
