DocumentCode :
2379840
Title :
SiGe Circuits for THz Applications
Author :
Pfeiffer, U.R.
Author_Institution :
Univ. of Wuppertal, Wuppertal, Germany
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. This paper presents recent attempts to operate SiGe HBTs close to and beyond their transistor cut-off frequencies. Examples include 820GHz sub-harmonically pumped SiGe imaging chip-sets with integrated on-chip antennas.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; SiGe; SiGe HB; SiGe circuit; SiGe imaging chip-sets; THz application; frequency 820 GHz; on-chip antenna; terahertz frequencies; transistor cut-off frequencies; CMOS integrated circuits; Horn antennas; Imaging; Mixers; Receivers; Silicon germanium; System-on-a-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
Type :
conf
DOI :
10.1109/ISTDM.2012.6222466
Filename :
6222466
Link To Document :
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