DocumentCode
2379840
Title
SiGe Circuits for THz Applications
Author
Pfeiffer, U.R.
Author_Institution
Univ. of Wuppertal, Wuppertal, Germany
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
2
Abstract
The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. This paper presents recent attempts to operate SiGe HBTs close to and beyond their transistor cut-off frequencies. Examples include 820GHz sub-harmonically pumped SiGe imaging chip-sets with integrated on-chip antennas.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; SiGe; SiGe HB; SiGe circuit; SiGe imaging chip-sets; THz application; frequency 820 GHz; on-chip antenna; terahertz frequencies; transistor cut-off frequencies; CMOS integrated circuits; Horn antennas; Imaging; Mixers; Receivers; Silicon germanium; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location
Berkeley, CA
Print_ISBN
978-1-4577-1864-9
Electronic_ISBN
978-1-4577-1863-2
Type
conf
DOI
10.1109/ISTDM.2012.6222466
Filename
6222466
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