Title :
Recent advances in Quantum Dot material for microwave semiconductor lasers and amplifiers
Author :
Dagens, B. ; Lelarge, F. ; Rousseau, B. ; Accard, A. ; Poingt, F. ; Provost, J.G. ; Make, D. ; Le Gouezigou, O. ; Landreau, J. ; Pommereau, F. ; Brenot, R. ; Renaudier, J. ; van Dijk, F. ; Duan, G.H.
Author_Institution :
Alcatel Thales III-V Lab., Palaiseau
Abstract :
Quantum dot material offers new perspectives for the development of low-cost, high performing semiconductor laser and amplifiers. The 3D quantification of the energy levels in quantum dots leads to potentially high optical gain and efficiency, and thus the possibility of operation at lower currents than quantum well devices. Better resistance to temperature change, lower linewidth enhancement factor and lower noise are also expected. The elaboration and the basic properties of the quantum dot material for laser and amplifiers will be first presented. Then the main device performance will be detailed, as well as the disruptive properties already obtained. Potentials for microwave photonic applications will be discussed
Keywords :
masers; microwave materials; microwave photonics; optical materials; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; 3D energy level quantification; microwave devices; microwave photonics; microwave semiconductor lasers; optical efficiency; optical gain; quantum dot material; semiconductor optical amplifiers; Laser noise; Masers; Microwave amplifiers; Optical materials; Optical noise; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Microwave devices; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Photonics, 2006. MWP '06. International Topical Meeting on
Conference_Location :
Grenoble
Print_ISBN :
1-4244-0203-4
Electronic_ISBN :
1-4244-0204-2
DOI :
10.1109/MWP.2006.346508