Title :
Strained High Percentage (60%) Boron Doped Silicon-Germanium Alloys - Strain, Dopant Substitionality, Carrier Concentration, Resistivity, and Microstructure Development
Author :
Reznicek, Alexander ; Adam, Thomas N. ; Hovel, Harold ; De Souza, Joel ; Zhu, Zhengmao ; Li, Jinghong ; Bedell, Stephen W. ; Paruchuri, Vamsi ; Sadana, Devendra K.
Author_Institution :
IBM Thomas J Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this work we study the incorporation of boron into fully strained high percentage (60%) boron doped Silicon-Germanium (SiGe). We will discuss the epitaxial growth, dopant incorporation, and strain compensation due to the dopant atoms, defect generation in highly strained doped SiGe layers as well as dopant activation, free carrier concentration and mobilities. We will look at band structure effects due to high doping in strained SiGe layers.
Keywords :
Ge-Si alloys; band structure; boron; carrier mobility; crystal microstructure; epitaxial growth; semiconductor growth; semiconductor materials; SiGe:B; band structure effects; boron doped silicon-germanium alloys; carrier concentration; defect generation; dopant activation; dopant atoms; dopant substitionality; epitaxial growth; microstructure development; strain compensation; Boron; Doping; Epitaxial growth; Microstructure; Silicon germanium; Strain; USA Councils;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222468
