Title :
14 nm FinFET Stress Engineering with Epitaxial SiGe Source/Drain
Author :
Choi, Munkang ; Moroz, Victor ; Smith, Lee ; Penzin, Oleg
Author_Institution :
Synopsys, Inc., Mountain View, CA, USA
Abstract :
To summarize, this paper explores key challenges of FinFET stress engineering that is based on the epitaxial SiGe S/D. These challenges are FinFET-specific and can be addressed by carefully balancing several design and process trade-offs simultaneously. An appropriate 3D modeling methodology is demonstrated to handle the new FinFET-specific design and process challenges.
Keywords :
Ge-Si alloys; MOSFET; 3D modeling methodology; FinFET stress engineering; FinFET-specific design; SiGe; epitaxial S-D; epitaxial source-drain; process trade-offs; size 14 nm; Compressive stress; Epitaxial growth; FinFETs; Logic gates; Shape; Silicon germanium;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222469
