Title :
Strain Engineering of Ultra-Thin Silicon-on-Insulator Structures Using Ion Implant
Author :
Ding, Yinjie ; Cheng, Ran ; Zhou, Qian ; Du, Anyan ; Daval, Nicolas ; Nguyen, Bich-yen ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
In this paper, we report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by solid-phase epitaxy (SPE).
Keywords :
Ge-Si alloys; elemental semiconductors; ion implantation; silicon-on-insulator; ion implant; silicon-on-insulator structures; solid-phase epitaxy; strain engineering; ultra-thin body and buried-oxide SOI structures; Annealing; Implants; Silicon; Silicon germanium; Strain; Substrates; Transistors;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222470
