Title :
Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors
Author :
Kang, Hyo-Soon ; Choi, Woo-Young
Author_Institution :
Dept. of Electr. Eng. & Electron. Eng., Yonsei Univ., Seoul
Abstract :
We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications
Keywords :
CMOS integrated circuits; electro-optical modulation; integrated optoelectronics; microwave photonics; millimetre wave mixers; multiwave mixing; optical frequency conversion; photodetectors; quadrature amplitude modulation; radio-over-fibre; silicon; CMOS-compatible Si photodetectors; QAM signals; Si; avalanche process; complementary metal-oxide-semiconductor process; conversion loss; frequency up-conversion; microwave photonics; millimeter-wave optoelectronic mixers; quadrature amplitude modulation; radio-on-fiber applications; CMOS process; Frequency; Mixers; Optical losses; Optical mixing; Optical modulation; Photodetectors; Quadrature amplitude modulation; RF signals; Voltage; Avalanche process; CMOS compatible photodetector; Radio-on-fiber systems; microwave photonics; optoelectronic mixer;
Conference_Titel :
Microwave Photonics, 2006. MWP '06. International Topical Meeting on
Conference_Location :
Grenoble
Print_ISBN :
1-4244-0203-4
Electronic_ISBN :
1-4244-0204-2
DOI :
10.1109/MWP.2006.346512