Benchmarking of Novel Contact Architectures on Silicon and Germanium

Novel contact architectures to n-Silicon (n-Si) and to n-Germanium (n-Ge) were benchmarked for the first time against the state-of-the-art contact architecture to n-Si. It was found that although the recently reported contact architectures to n-Ge exhibit markedly improved performance, more work must be done to match state-of the-art NiSi/n-Si contact architecture in terms of current-carrying capability.