DocumentCode

2380008

Title

First order quasi-static SOI MOSFET channel capacitance model

Author

Sharma, Sameer ; Johnson, L.G.

Author_Institution

Oklahoma State University, Stillwater, 74075, USA

fYear

2007

fDate

15-17 Oct. 2007

Firstpage

42

Lastpage

47

Keywords

Capacitance; Circuit simulation; Energy storage; Equations; MOSFET circuits; Mathematical model; Power MOSFET; Power dissipation; Predictive models; Propagation delay;

fLanguage

English

Publisher

ieee

Conference_Titel

Very Large Scale Integration, 2007. VLSI - SoC 2007. IFIP International Conference on

Conference_Location

Atlanta, GA, USA

Print_ISBN

978-1-4244-1710-0

Electronic_ISBN

978-1-4244-1710-0

Type

conf

DOI

10.1109/VLSISOC.2007.4402470

Filename

4402470