Title :
Demonstration of Electroluminescence from Strained Ge Membrane LED
Author :
Nam, Donguk ; Sukhdeo, David ; Cheng, Szu-Lin ; Huang, Kevin Chih-Yao ; Brongersma, Mark ; Nishi, Yoshio ; Saraswat, Krishna
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We demonstrate electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength. We also discuss the implications for highly efficient Ge lasers.
Keywords :
electroluminescence; germanium; light emitting diodes; LED; electrical measurements; electroluminescence; light-emitting diodes; on-off ratio; strained Ge membrane; Electroluminescence; Lasers; Light emitting diodes; Photonic band gap; Silicon; Strain; Threshold current;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222477
