• DocumentCode
    2380017
  • Title

    Demonstration of Electroluminescence from Strained Ge Membrane LED

  • Author

    Nam, Donguk ; Sukhdeo, David ; Cheng, Szu-Lin ; Huang, Kevin Chih-Yao ; Brongersma, Mark ; Nishi, Yoshio ; Saraswat, Krishna

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength. We also discuss the implications for highly efficient Ge lasers.
  • Keywords
    electroluminescence; germanium; light emitting diodes; LED; electrical measurements; electroluminescence; light-emitting diodes; on-off ratio; strained Ge membrane; Electroluminescence; Lasers; Light emitting diodes; Photonic band gap; Silicon; Strain; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222477
  • Filename
    6222477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380017