Title :
Theoretical analysis of EUV spectrum of Xe and Sn
Author_Institution :
Adv. Photon Res. Center, Japan Atomic Energy Res. Inst., Kyoto, Japan
Abstract :
Emission in the extreme ultraviolet (EUV) wavelength from Xe and Sn plasmas pumped by either laser irradiation (LPP) or discharge (DPP) has been studied toward its application to semiconductor technology. In this paper, identification of emission lines and analysis of spectral profile are presented, based on the atomic structure and rate coefficient calculation using HULLAC, and atomic process simulation using the whiam collisional radiative (CR) model.
Keywords :
discharges (electric); optical pumping; plasma density; plasma production by laser; plasma simulation; spectral line breadth; tin; ultraviolet lithography; ultraviolet sources; ultraviolet spectra; xenon; EUV spectrum; HULLAC; Sn; Sn plasma; Xe; Xe plasma; atomic process simulation; atomic structure; discharge produced plasma; emission lines; extreme ultraviolet wavelength emission; laser irradiation; laser produced plasma; optical pumping; rate coefficient calculation; spectral profile; whiam collisional radiative model; Atomic beams; Atomic measurements; Laser excitation; Laser modes; Laser theory; Plasma applications; Plasma simulation; Plasma waves; Tin; Ultraviolet sources;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251754
