Title :
Trap-Assisted Tunneling in Vertical Si and SiGe Hetero-Tunnel-FETs
Author :
Vandooren, A. ; Leonelli, D. ; Rooyackers, R. ; Hikavyy, A. ; Devriendt, K. ; Loo, R. ; Demand, M. ; Groeseneken, G. ; Huyghebaert, C.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
We demonstrated improved hetero-vertical TFET using Si1-xGex source. Temperature measurements indicate that TAT degrades the swing. Simulations match well the experimental data when including the trap-assisted model and suggest that a Ge-source TFET, combined with low material defectivity, can suppress the swing degradation.
Keywords :
Ge-Si alloys; field effect transistors; germanium; tunnelling; Ge; Ge-source TFET; Si1-xGex; SiGe hetero-tunnel-FET; TAT; hetero-vertical TFET; low material defectivity; swing degradation; temperature measurement; trap-assisted tunneling; vertical Si; Junctions; Logic gates; Performance evaluation; Photonic band gap; Silicon; Temperature; Tunneling;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222482
