DocumentCode
2380163
Title
Design, analysis and optimisation of monolithic inductors for RF applications
Author
Pukneva, D. ; Dodeva, G. ; Hristov, M. ; Roussel, A.
Author_Institution
Fac. of Electron., Tech. Univ. of Sofia, Bulgaria
Volume
3
fYear
2002
fDate
2002
Firstpage
63
Abstract
The design, analysis and optimisation of monolithic inductors on silicon (Si) substrates are discussed. Inductors with inductance values from 1 to 20 nH and quality factors up to 14 for AMS 0.35 μm CMOS and AMS 0.8 μm BiCMOS SiGe technologies are created. A custom computer-aided-design tool called ASITIC (analysis and simulation of inductors and transformers for integrated circuits) is used for the design, analysis and optimisation. Structures created in ASITIC are optimised and verified with simulations in CADENCE. The influence of quality factor of integrated inductors on the performance of radio frequency (RF) building blocks is investigated.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; Q-factor; circuit CAD; circuit optimisation; circuit simulation; inductors; integrated circuit design; integrated circuit modelling; 0.35 micron; 0.8 micron; ASITIC CAD tool; BiCMOS; CMOS; IC inductor/transformer simulation tool; RF applications; Si; SiGe; inductance values; inductor Q factor; inductor design/analysis/optimisation; integrated inductors; monolithic inductors; radio frequency building blocks; silicon substrates; substrate losses; Application software; BiCMOS integrated circuits; Circuit simulation; Computational modeling; Design optimization; Inductance; Inductors; Q factor; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Systems, 2002. Proceedings. 2002 First International IEEE Symposium
Print_ISBN
0-7803-7134-8
Type
conf
DOI
10.1109/IS.2002.1042589
Filename
1042589
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