A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Author

Jaeseo Lee ; Seong-Jun Song ; Sung Min Park ; Choong-Mo Nam ; Young-Se Kwon ; Hoi-Jun Yoo

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

1

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

80

Abstract

A 1.0 Gb/s 80 dB/spl Omega/ fully-differential TIA uses 0.25 /spl mu/m CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5/spl times/5 mm/sup 2/ and 0.7/spl times/1 mm/sup 2/, respectively.

Keywords

CMOS analogue integrated circuits; differential amplifiers; low-power electronics; optical crosstalk; optical interconnections; 0.25 micron; 1 Gbit/s; 27 mW; MCO; fully-differential CMOS transimpedance amplifier; interchannel crosstalk; multichip on oxide; optical interconnect applications; planar inductors; power dissipation; shunt peaking; Bandwidth; Circuit noise; Differential amplifiers; Inductors; Noise reduction; Optical amplifiers; Semiconductor optical amplifiers; Silicon; Stimulated emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.992948

Filename

992948