• DocumentCode
    2380169
  • Title

    Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics

  • Author

    Nakatsuka, Osamu ; Shimura, Yosuke ; Takeuchi, Wakana ; Taoka, Noriyuki ; Zaima, Shigeaki

  • Author_Institution
    Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In summary, Ge1-xSnx alloy provides a new aspect into the growth, strain, electronic, and energy band engineering technology. The future prospect of Ge1-xSnx application is very exciting and promising for not only electronic but also optoelectronic applications.
  • Keywords
    band structure; germanium alloys; nanoelectronics; Ge nanoelectronics; Ge1-xSnx; energy band engineering technolog; optoelectronic application; Atomic layer deposition; Epitaxial layers; Strain; Substrates; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222485
  • Filename
    6222485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380169