Title :
A 2-watt, 0.15-µm GaAs pHEMT stacked amplifier at 22 GHz
Author :
Fersch, Thomas ; Weigel, Robert ; Quaglia, R. ; Pirola, Marco ; Ghione, G. ; Camarchia, Vittorio
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
This paper presents a 33 dBm, 3-stage stacked GaAs pHEMT power amplifier at 22GHz with on-chip matching networks. The circuit topology is explained, and interstage matching techniques are simulated to investigate their aptitude to achieve interstage matching for the individual transistors. Special care was put on the design of a very compact layout with on-chip matching networks. Simulation results are presented and the stacking benefits are outlined.
Keywords :
HEMT integrated circuits; field effect MMIC; impedance matching; microwave power amplifiers; GaAs; frequency 22 GHz; onchip matching network; pHEMT stacked amplifier; power 2 W; power amplifier; size 0.15 mum; Capacitors; Degradation; Impedance matching; Logic gates; PHEMTs; Reliability; Resistors; Gallium arsenide; high efficiency; point-to-point radio; power amplifier;
Conference_Titel :
Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on
Conference_Location :
Gdansk
Print_ISBN :
978-617-607-553-0
DOI :
10.1109/MIKON.2014.6899880
