Title :
Reliability perspective of high-k gate dielectrics - what is different from SiO2?
Author_Institution :
Dept. of Material Sci., Univ. of Tokyo, Japan
Abstract :
This paper discusses fundamental aspects of high-k material properties for advanced CMOS, focusing on the reliability in comparison with SiO2. It is stressed that even the most ideally processed high-k material might (inevitably) have inherent defects or defect origins. This presents a striking contrast to SiO2, conventionally and continuously used for Si microelectronics. High-k technology is not an easy business, and tremendous efforts are required in a very wide range from fundamental research to technology push.
Keywords :
CMOS integrated circuits; MOSFET; alumina; crystal defects; dielectric thin films; hafnium compounds; integrated circuit reliability; plasma materials processing; semiconductor device reliability; sputter etching; zirconium compounds; Al2O3; HfO2; MOSFET; ZrO2; advanced CMOS; etching technology; high-k films; high-k gate dielectrics; inherent defects; plasma-induced damage; processing defects; reliability; silicates; CMOS technology; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Leakage current; Material properties; Materials reliability; Materials science and technology; Physics; Reliability engineering;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042596
