• DocumentCode
    2380279
  • Title

    Run-time Active Leakage Reduction by power gating and reverse body biasing: An eNERGY vIEW

  • Author

    Xu, Hao ; Vemuri, Ranga ; Wen-Ben Jone

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Cincinnati, Cincinnati, OH
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    618
  • Lastpage
    625
  • Abstract
    Run-time active leakage reduction (RALR) is a recent technique and aims at aggressively reducing leakage power consumption. This paper studies the feasibility of RALR from the energy aspect, for both power gating (PG) and reverse body bias (RBB) implementations.We develop two energy saving models for PG and RBB, respectively. These models can accurately estimate the circuit energy saving at any time, even when the circuit is in state transition. In PG modeling, we discover a physical phenomenon called ldquoinstant savingrdquo, which can affect the model accuracy by 30%-50%. Based on the RBB model, we derive the optimum design point of RBB for RALR. Finally in terms of energy saving, we define four figures-of-merit, to compare the efficacy of using PG and RBB to implement RALR.
  • Keywords
    MOSFET; power consumption; MOSFET; circuit energy saving; figures-of-merit; leakage power consumption; power gating; reverse body biasing; run-time active leakage reduction; Capacitance; Energy consumption; Gate leakage; Leakage current; Runtime; State estimation; Subthreshold current; Switches; Switching circuits; Tuned circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Design, 2008. ICCD 2008. IEEE International Conference on
  • Conference_Location
    Lake Tahoe, CA
  • ISSN
    1063-6404
  • Print_ISBN
    978-1-4244-2657-7
  • Electronic_ISBN
    1063-6404
  • Type

    conf

  • DOI
    10.1109/ICCD.2008.4751925
  • Filename
    4751925