DocumentCode
2380279
Title
Run-time Active Leakage Reduction by power gating and reverse body biasing: An eNERGY vIEW
Author
Xu, Hao ; Vemuri, Ranga ; Wen-Ben Jone
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Cincinnati, Cincinnati, OH
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
618
Lastpage
625
Abstract
Run-time active leakage reduction (RALR) is a recent technique and aims at aggressively reducing leakage power consumption. This paper studies the feasibility of RALR from the energy aspect, for both power gating (PG) and reverse body bias (RBB) implementations.We develop two energy saving models for PG and RBB, respectively. These models can accurately estimate the circuit energy saving at any time, even when the circuit is in state transition. In PG modeling, we discover a physical phenomenon called ldquoinstant savingrdquo, which can affect the model accuracy by 30%-50%. Based on the RBB model, we derive the optimum design point of RBB for RALR. Finally in terms of energy saving, we define four figures-of-merit, to compare the efficacy of using PG and RBB to implement RALR.
Keywords
MOSFET; power consumption; MOSFET; circuit energy saving; figures-of-merit; leakage power consumption; power gating; reverse body biasing; run-time active leakage reduction; Capacitance; Energy consumption; Gate leakage; Leakage current; Runtime; State estimation; Subthreshold current; Switches; Switching circuits; Tuned circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Design, 2008. ICCD 2008. IEEE International Conference on
Conference_Location
Lake Tahoe, CA
ISSN
1063-6404
Print_ISBN
978-1-4244-2657-7
Electronic_ISBN
1063-6404
Type
conf
DOI
10.1109/ICCD.2008.4751925
Filename
4751925
Link To Document