Title :
Fully Relaxed Epitaxial Silicon Germanium on Silicon (001) with Low Threading Dislocation Density by Ion Implantation and Anneal
Author :
Liu, Jinping ; Kasim, Johnson ; Lee, Paul ; Chandra, Reddy ; See, Alex ; Sudijono, John
Author_Institution :
Technol. Dev., GLOBALFOUNDRIES Inc., Sunnyvale, CA, USA
Abstract :
This paper showed that good quality fully relaxed SiGe layer on Si substrate can be successfully obtained by implantation and high temperature annealing, two commonly used processes in CMOS processing technologies.
Keywords :
Ge-Si alloys; annealing; dislocation density; epitaxial growth; high-temperature effects; ion implantation; semiconductor epitaxial layers; semiconductor growth; CMOS processing technologies; Si; Si(001) surface; SiGe; fully relaxed epitaxial silicon germanium; high-temperature annealing; ion implantation; low threading dislocation density; Annealing; Epitaxial growth; Reflection; Silicon; Silicon germanium; Strain; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222491
