• DocumentCode
    2380310
  • Title

    Fully Relaxed Epitaxial Silicon Germanium on Silicon (001) with Low Threading Dislocation Density by Ion Implantation and Anneal

  • Author

    Liu, Jinping ; Kasim, Johnson ; Lee, Paul ; Chandra, Reddy ; See, Alex ; Sudijono, John

  • Author_Institution
    Technol. Dev., GLOBALFOUNDRIES Inc., Sunnyvale, CA, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper showed that good quality fully relaxed SiGe layer on Si substrate can be successfully obtained by implantation and high temperature annealing, two commonly used processes in CMOS processing technologies.
  • Keywords
    Ge-Si alloys; annealing; dislocation density; epitaxial growth; high-temperature effects; ion implantation; semiconductor epitaxial layers; semiconductor growth; CMOS processing technologies; Si; Si(001) surface; SiGe; fully relaxed epitaxial silicon germanium; high-temperature annealing; ion implantation; low threading dislocation density; Annealing; Epitaxial growth; Reflection; Silicon; Silicon germanium; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222491
  • Filename
    6222491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380310