DocumentCode :
2380322
Title :
Epitaxial Growth of Highly Strained SiGe Layers Directly on Si(001) Substrate
Author :
Halpin, John ; Shah, Vishal ; Myronov, Maksym ; Leadley, David
Author_Institution :
Phys. Dept., Univ. of Warwick, Coventry, UK
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
Highly strained epilayers of Si0.4Ge0.6 can be grown pseudomorphically on a Si (001) substrate with thicknesses up to ~25 nm. The epilayer surface morphology was analyzed by atomic force microscopy (AFM) and defects observed in the relaxed epilayers were analyzed by combination of plan view transmission electron microscopy PV-TEM and AFM.
Keywords :
X-ray diffraction; atomic force microscopy; chemical vapour deposition; epitaxial growth; germanium alloys; semiconductor epitaxial layers; semiconductor growth; silicon alloys; surface morphology; transmission electron microscopy; AFM; HR-XRD; PV-TEM; Si; Si(001) substrate; SiGe; XTEM analysis; atomic force microscopy; epilayer surface morphology; epitaxial growth; high resolution X-ray diffraction; highly strained layers; plan view transmission electron microscopy; Atomic force microscopy; Silicon; Silicon germanium; Strain; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
Type :
conf
DOI :
10.1109/ISTDM.2012.6222492
Filename :
6222492
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2380322
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