Development of a physical model of UV induced bulk photoconduction in silicon dioxide and application to charging damage

Author

Joshi, Mayur ; McVittie, James P. ; Saraswat, Krishna

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

2002

fDate

2002

Firstpage

23

Lastpage

26

Abstract

Processing plasmas are a source of intense VUV photons, with the potential to induce photoconduction in dielectrics. The authors present measurements of the photon flux incident on the wafer done to collect the data required to construct a model. An analytical model was constructed that successfully matches these experimental results. This model was then used to predict the effect of photoconduction on plasma charging damage during PECVD.

Keywords

dielectric thin films; photoconductivity; plasma CVD; plasma materials processing; semiconductor device manufacture; semiconductor process modelling; silicon compounds; surface treatment; PECVD; SiO₂; UV-induced bulk photoconduction; analytical model; gate dielectric; intense VUV photons; physical model; plasma charging damage; processing plasmas; semiconductor manufacture; Analytical models; Dielectric measurements; Photoconductivity; Plasma applications; Plasma materials processing; Plasma measurements; Plasma sources; Predictive models; Semiconductor device modeling; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2002 7th International Symposium on

Print_ISBN

0-9651577-7-6

Type

conf

DOI

10.1109/PPID.2002.1042600

Filename

1042600