Title :
Simple Fabrication of Suspended Germanium Structures and Their Electrical Properties from High Quality Ge on Si(001) Layers
Author :
Shah, Vishal A. ; Myronov, Maksym ; Wongwanitwatana, Chalermwat ; Morris, Richard J.H. ; Prest, Martin J. ; Richardson-Bullock, James ; Parker, Evan H.C. ; Whall, Terry E. ; Leadley, David R.
Author_Institution :
Phys. Dept., Warwick Univ., Coventry, UK
Abstract :
In this work, we present a method to isolate this dislocation conduction within a Ge on Si layer at low temperatures through removing the Ge/Si interface to reduce dislocation leakage.
Keywords :
dislocation structure; electric properties; elemental semiconductors; germanium; silicon; Ge-Si; Si; dislocation conduction; dislocation leakage reduction; electrical properties; suspended germanium structures; Epitaxial growth; Germanium; Instruction sets; Physics; Silicon; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222500
