• DocumentCode
    2380457
  • Title

    Simple Fabrication of Suspended Germanium Structures and Their Electrical Properties from High Quality Ge on Si(001) Layers

  • Author

    Shah, Vishal A. ; Myronov, Maksym ; Wongwanitwatana, Chalermwat ; Morris, Richard J.H. ; Prest, Martin J. ; Richardson-Bullock, James ; Parker, Evan H.C. ; Whall, Terry E. ; Leadley, David R.

  • Author_Institution
    Phys. Dept., Warwick Univ., Coventry, UK
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we present a method to isolate this dislocation conduction within a Ge on Si layer at low temperatures through removing the Ge/Si interface to reduce dislocation leakage.
  • Keywords
    dislocation structure; electric properties; elemental semiconductors; germanium; silicon; Ge-Si; Si; dislocation conduction; dislocation leakage reduction; electrical properties; suspended germanium structures; Epitaxial growth; Germanium; Instruction sets; Physics; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222500
  • Filename
    6222500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380457