• DocumentCode
    2380481
  • Title

    ZZ-HVS: Zig-zag horizontal and vertical sleep transistor sharing to reduce leakage power in on-chip SRAM peripheral circuits

  • Author

    Homayoun, Houman ; Makhzan, Mohammad ; Veidenbaum, Alex

  • Author_Institution
    Dept. of Comput. Sci., UC, Irvine, CA
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    699
  • Lastpage
    706
  • Abstract
    Based on Recent studies peripheral circuit (including decoders, wordline drivers, input and output drivers) constitutes a large portion of the cache leakage. In addition as technology migrate to smaller geometries, leakage contribution to total power consumption increases faster than dynamic power, promoting leakage as the largest power consumption factor. This paper proposes zig-zag share, a circuit technique to reduce leakage in SRAM peripheral. Using architectural control of zig-zag share, an integrated technique called Sleep-Share is proposed and applied in L1 and L2 caches. The results show leakage reduction by up to 40X in deeply pipelined SRAM peripheral circuits, with only a 4% area overhead and small additional delay.
  • Keywords
    SRAM chips; cache storage; architectural control; cache leakage; leakage power; leakage reduction; on-chip SRAM peripheral circuits; zig-zag horizontal and vertical sleep transistor sharing; CMOS technology; Decoding; Delay; Driver circuits; Energy consumption; Integrated circuit technology; Power dissipation; Random access memory; Sleep; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Design, 2008. ICCD 2008. IEEE International Conference on
  • Conference_Location
    Lake Tahoe, CA
  • ISSN
    1063-6404
  • Print_ISBN
    978-1-4244-2657-7
  • Electronic_ISBN
    1063-6404
  • Type

    conf

  • DOI
    10.1109/ICCD.2008.4751937
  • Filename
    4751937