DocumentCode
2380481
Title
ZZ-HVS: Zig-zag horizontal and vertical sleep transistor sharing to reduce leakage power in on-chip SRAM peripheral circuits
Author
Homayoun, Houman ; Makhzan, Mohammad ; Veidenbaum, Alex
Author_Institution
Dept. of Comput. Sci., UC, Irvine, CA
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
699
Lastpage
706
Abstract
Based on Recent studies peripheral circuit (including decoders, wordline drivers, input and output drivers) constitutes a large portion of the cache leakage. In addition as technology migrate to smaller geometries, leakage contribution to total power consumption increases faster than dynamic power, promoting leakage as the largest power consumption factor. This paper proposes zig-zag share, a circuit technique to reduce leakage in SRAM peripheral. Using architectural control of zig-zag share, an integrated technique called Sleep-Share is proposed and applied in L1 and L2 caches. The results show leakage reduction by up to 40X in deeply pipelined SRAM peripheral circuits, with only a 4% area overhead and small additional delay.
Keywords
SRAM chips; cache storage; architectural control; cache leakage; leakage power; leakage reduction; on-chip SRAM peripheral circuits; zig-zag horizontal and vertical sleep transistor sharing; CMOS technology; Decoding; Delay; Driver circuits; Energy consumption; Integrated circuit technology; Power dissipation; Random access memory; Sleep; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Design, 2008. ICCD 2008. IEEE International Conference on
Conference_Location
Lake Tahoe, CA
ISSN
1063-6404
Print_ISBN
978-1-4244-2657-7
Electronic_ISBN
1063-6404
Type
conf
DOI
10.1109/ICCD.2008.4751937
Filename
4751937
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