DocumentCode
2380511
Title
Electron shading effects during oxide etching in uniform and non-uniform plasmas
Author
Lukaszek, Wes ; Shields, Jeffrey
Author_Institution
Wafer Charging Monitors Inc., Woodside, CA, USA
fYear
2002
fDate
2002
Firstpage
68
Lastpage
71
Abstract
Potentials and current densities imposed on device structures during oxide etching due to electron shading effects are presented. Comparison of results obtained in etchers exhibiting good plasma uniformity with results from etchers exhibiting plasma non-uniformity emphasizes the importance of uniform plasma to minimize charging damage during IC manufacturing.
Keywords
integrated circuit manufacture; integrated circuit reliability; plasma materials processing; sputter etching; surface charging; IC manufacturing; charging damage minimization; electron shading effects; nonuniform plasmas; oxide etching; plasma uniformity; uniform plasmas; Current density; Current measurement; Electrons; Etching; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN
0-9651577-7-6
Type
conf
DOI
10.1109/PPID.2002.1042611
Filename
1042611
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