Title :
The Effect of Gate Length on Channel Strain of Recessed Source/Drain Si1-xCx
Author :
Ko, Dae-Hong ; Kim, Sun-Wook ; Byeon, Dae-Seop ; Koo, Sangmo ; Mijin Jung ; Chopra, Mijin Junga Saurabh ; Kim, Yihwan ; Lee, Hoo-Jeong
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
In this study, we experimentally evaluated the effects of scaling on the channel strain in terms of gate lengths. We used transistor arrays incorporating Si1-xCx as a stressor with systematically varying gate and source/drain lengths, and employed the NBD method to measure the channel strain. We also carried out simulation to check the validity of the NBD data.
Keywords :
field effect transistors; silicon compounds; wide band gap semiconductors; NBD method; Si1-xCx; channel strain; gate length effect; recessed source/drain; scaling effects; stressor; transistor arrays; Carbon; Logic gates; Semiconductor process modeling; Silicon; Strain; Transistors;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222509
