Title :
On-wafer monitoring for conductivity of sidewall in SiO2 contact holes
Author :
Shinmura, Takuya ; Soda, S. ; Hane, Kazuhiro ; Samukawa, Seiji
Author_Institution :
Inst. of Fluid Sci., Touhoku Univ., Japan
Abstract :
This paper reports on on-wafer monitoring of the conductivity of sidewall-deposited polymer in high-aspect contact holes for the first time. We have found that a carbon-rich polymer causes higher conductivity of sidewall surfaces.
Keywords :
ULSI; integrated circuit manufacture; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; silicon compounds; sputter etching; surface conductivity; C-rich polymer; SiO2; ULSI fabrication; contact holes sidewall surface conductivity; high-aspect contact holes; on-wafer monitoring; sidewall-deposited polymer; Conductivity; Electrodes; Electrons; Etching; Monitoring; Plasma applications; Plasma measurements; Plasma temperature; Semiconductor films; Silicon;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042619
