Title :
Impact of Strain Engineering on Nanoscale Ge PMOSFET
Author :
Hsieh, B.-F. ; Chang, S.T. ; Huang, M.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
This work presents an analysis via simulation of the width dependence of the stress components (longitudinal, vertical and transverse) in the PMOS channel region, and its influence on electron mobility. A 3D ANSYS study on the stress distribution is performed; and the impact of channel width and channel length on the device performance such as mobility gain is explored.
Keywords :
MOSFET; electron mobility; elemental semiconductors; germanium; nanoelectronics; 3D ANSYS; PMOS channel region; channel length; channel width; electron mobility; mobility gain; nanoscale Ge PMOSFET; strain engineering; stress components; stress distribution; width dependence; Finite element methods; Logic gates; MOSFET circuits; Metals; Simulation; Strain; Stress;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222515
