Title :
Characterization of microtrenching on 0.13μm NMOS and PMOS transistors using DAHC and edge FN stress
Author :
Chua, C.S. ; Chor, E.F. ; Ang, C.H. ; Tan, J. ; Goh, F. ; Yu, J. ; Pradeep, Y. ; See, A. ; Chan, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The degradation of 0.13μm NMOS and PMOS transistors caused by microtrenching (μT) under hot-carrier and edge FN stress is studied. DAHC stress was found to be a sensitive technique for characterizing the NMOS transistors while edge FN stress was more suitable for the PMOS transistors. Interface state generation was also identified as the dominant degradation mechanism.
Keywords :
MOS integrated circuits; MOSFET; interface states; 0.13 micron; NMOS transistors; PMOS transistors; dominant degradation mechanism; drain avalanche hot carrier stress; edge Fowler-Nordheim stress; interface state generation; microtrenching characterization; transistor degradation; Degradation; Drain avalanche hot carrier injection; Electrons; Etching; Ground penetrating radar; Hot carriers; MOS devices; MOSFETs; Stress; Voltage;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042621
