Title :
Plasma induced damage from via etching in pMOSFETs
Author :
Cellere, G. ; Valentin, M.G. ; Baraldo, A. ; Paccagnella, A.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
In this paper, we present a study of micro breakdown (MB), soft breakdown (SB), and conventional hard breakdown (HB) on pMOSFET devices. In particular, we report evident damage due to via etching.
Keywords :
MOSFET; plasma materials processing; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; sputter etching; conventional hard breakdown; micro breakdown; pMOSFET devices; pMOSFETs; plasma induced damage; soft breakdown; via etching; Electric breakdown; Etching; Fingers; Leakage current; MOSFETs; Plasma applications; Plasma devices; Plasma materials processing; Stress; Voltage;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042622
