DocumentCode
2380745
Title
Wafer arcing phenomena and resolution through a capacitively coupled low gap plasma reactor
Author
Fischer, Aiidreas ; Pirkle, David ; Wu, Dee ; Loewenhardt, Peter ; Tietz, Jim ; Marks, Jeffrey
Author_Institution
Lam Res. Corp., Fremont, CA, USA
fYear
2002
fDate
2002
Firstpage
130
Lastpage
133
Abstract
Electromagnetic simulations have been performed on a hypothetical device structure showing that electric field strengths around large metal structures can be close to electric breakdown, in particular in low-k materials. A plasma reactor design is presented leading to a large window of operation, free of wafer arcing.
Keywords
arcs (electric); sputter etching; capacitively coupled low gap plasma reactor; electric breakdown; electric field strengths; electromagnetic simulations; large metal structures; low-k materials; plasma etching; plasma reactor design; wafer arcing; wafer arcing phenomena; Dielectrics; Electric breakdown; Electromagnetic devices; Inductors; Inorganic materials; Plasma devices; Plasma materials processing; Plasma simulation; Radio frequency; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN
0-9651577-7-6
Type
conf
DOI
10.1109/PPID.2002.1042626
Filename
1042626
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