Process dependent antenna ratio rules for HSQ and FSG back-ends of (embedded flash) 0.18 μm CMOS technology

Author

Scarpa, Andrea ; Diekema, Margriet ; Van der Schaar, Cecile ; Valk, Hein ; Harke, Alexander ; Kuper, Fred G.

Author_Institution

Philips Semicond., Nijmegen, Netherlands

fYear

2002

fDate

2002

Firstpage

138

Lastpage

141

Abstract

The charging damage induced by the inter-metal dielectric deposition in a hydrogen silsequioxane (HSQ) and in a fluorinated-silica glass (FSG) now are compared in a worst case scenario experiment, carried out in a 0.18 μm embedded flash process. It is shown that different charging damage mechanisms take place in the two flows, calling for different definitions of antenna ratios and different antenna design rules. It is also shown that non-volatile memory arrays are much less susceptible to charging damage than the logic part of the IC.

Keywords

CMOS memory circuits; antennas in plasma; flash memories; integrated circuit reliability; plasma deposition; plasma diagnostics; random-access storage; surface charging; 0.18 micron; CMOS technology; FSG back-ends; HSQ back-ends; SiO₂:F; antenna design rules; antenna ratios; charging damage; charging damage mechanisms; embedded flash process; fluorinated-silica glass; hydrogen silsequioxane; intermetal dielectric deposition; nonvolatile memory arrays; process dependent antenna ratio rules; reliability; CMOS technology; Dielectrics; Fingers; Glass; Hydrogen; Logic arrays; MOSFETs; Plasma applications; Plasma devices; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2002 7th International Symposium on

Print_ISBN

0-9651577-7-6

Type

conf

DOI

10.1109/PPID.2002.1042628

Filename

1042628