Title :
NBTI analysis of antenna pMOSFET with thermally recovered plasma-induced damage
Author :
Matsunaga, Noriaki ; Yoshinari, Hitomi ; Shibata, Hideki
Author_Institution :
Syst. LSI Res. & Dev. Center, Toshiba Corp., Yokohama, Japan
Abstract :
Negative bias temperature instability (NBTI) of antenna pMOSFET with thermally recovered plasma-induced damage (PID) was analyzed in detail. We found that thermal processes in the BEOL such as cure process of spin-on dielectric (SOD), and forming gas sintering, could recover the PID and improve NBTI endurance. Furthermore, we found for the first time that subjection to PID and the recovery bring about a greater improvement in results of the NBTI test than in the case of controlled pMOSFET.
Keywords :
MOSFET; antennas in plasma; semiconductor device reliability; BEOL process enhanced NBTI; NBTI analysis; PID; SOD; antenna pMOSFET; controlled pMOSFET; cure process; forming gas sintering; negative bias temperature instability; spin-on dielectric; thermally recovered plasma-induced damage; Large scale integration; MOSFET circuits; Niobium compounds; Plasma applications; Plasma devices; Plasma measurements; Plasma temperature; Stress; Testing; Titanium compounds;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042629
