2380807

Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics

Tan, Shyue-Seng ; Chen, Tupei ; Ang, Chew-Hoe ; Lek, Chun-Meng ; Lin, Wenhe ; Zheng, Jie Zhen ; See, Alex ; Chan, Lap

Nanyang Technological University

2002

5-7 June 2002

146

149

CMOS technology; Dielectrics; MOSFET circuits; Niobium compounds; Plasma applications; Plasma materials processing; Plasma temperature; Thermal stresses; Threshold voltage; Titanium compounds;

English

ieee

Plasma- and Process-Induced Damage, 2002 7th International Symposium on

Maui, HI, USA

0-9651577-7-6

conf

10.1109/PPID.2002.1042630

1042630