• DocumentCode
    2380869
  • Title

    2 GHz monolithic low noise amplifier using lower than 1 V supply voltage

  • Author

    Lott, Urs ; Schmatz, Martin L.

  • Author_Institution
    Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
  • fYear
    1997
  • fDate
    11-13 Aug 1997
  • Firstpage
    138
  • Lastpage
    140
  • Abstract
    A monolithically integrated low noise amplifier (LNA) for PCS applications in the frequency range of 1.6 to 2 GHz has been designed. Using a 0.9 V single supply voltage, it achieves a noise figure of less than 3 dB with a gain of 10 dB. The chip size is 1 mm2 with full on chip matching
  • Keywords
    MESFET integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit measurement; integrated circuit testing; land mobile radio; mobile radio; personal communication networks; 0.9 V; 1.6 to 2 GHz; 10 dB; GaAs; MESFET; PCS applications; UHF; chip matching; chip size; frequency range; gain; monolithic low noise amplifier; monolithically integrated amplifier; noise figure; portable communications equipment; supply voltage; Current measurement; Gain measurement; Impedance measurement; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Packaging; Personal communication networks; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Communications Conference, 1997., Proceedings
  • Conference_Location
    Boulder, CO
  • Print_ISBN
    0-7803-4194-5
  • Type

    conf

  • DOI
    10.1109/WCC.1997.622265
  • Filename
    622265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380869