Title : 
2 GHz monolithic low noise amplifier using lower than 1 V supply voltage
         
        
            Author : 
Lott, Urs ; Schmatz, Martin L.
         
        
            Author_Institution : 
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
         
        
        
        
        
        
            Abstract : 
A monolithically integrated low noise amplifier (LNA) for PCS applications in the frequency range of 1.6 to 2 GHz has been designed. Using a 0.9 V single supply voltage, it achieves a noise figure of less than 3 dB with a gain of 10 dB. The chip size is 1 mm2 with full on chip matching
         
        
            Keywords : 
MESFET integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit measurement; integrated circuit testing; land mobile radio; mobile radio; personal communication networks; 0.9 V; 1.6 to 2 GHz; 10 dB; GaAs; MESFET; PCS applications; UHF; chip matching; chip size; frequency range; gain; monolithic low noise amplifier; monolithically integrated amplifier; noise figure; portable communications equipment; supply voltage; Current measurement; Gain measurement; Impedance measurement; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Packaging; Personal communication networks; Voltage;
         
        
        
        
            Conference_Titel : 
Wireless Communications Conference, 1997., Proceedings
         
        
            Conference_Location : 
Boulder, CO
         
        
            Print_ISBN : 
0-7803-4194-5
         
        
        
            DOI : 
10.1109/WCC.1997.622265