Investigation of electromigration properties and plasma charging damages for plasma treatment process in Cu interconnects

Author

Wang, Robin C J ; Su, D.S. ; Yang, C.T. ; Chen, D.H. ; Doong, Y.Y. ; Shih, J.R. ; Lee, S.Y. ; Chiu, C.C. ; Peng, Y.K. ; Yue, J.T.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2002

fDate

2002

Firstpage

166

Lastpage

168

Abstract

This work reports the electrical performance impact of plasma treatment prior to the dielectric deposition of 0.13μm copper dual damascene process. The experiment showed the sequence of plasma treatment process dominated electromigration (EM) immunity. On the contrast, the antenna effect experiment indicated that the superiority of electromigration immunity was paid for the degeneracy of plasma induced charging damage. An optimal solution between electromigration immunity and threshold voltage shifts induced by plasma charging damage was proposed.

Keywords

copper; electromigration; integrated circuit interconnections; plasma materials processing; surface charging; 0.13 micron; Cu; Cu interconnect; antenna effect; dielectric deposition; dual damascene process; electrical performance; electromigration immunity; electromigration properties; plasma charging damage; plasma induced charging damages; plasma treatment process; threshold voltage shifts; Copper; Dielectrics; Electromigration; Isothermal processes; Plasma applications; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2002 7th International Symposium on

Print_ISBN

0-9651577-7-6

Type

conf

DOI

10.1109/PPID.2002.1042635

Filename

1042635