Improving metal step coverage with Ar sputtering

Author

Lin, Tin-Hwanq ; Lin, Mou-Siong ; Yoo, Chue-San

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-chu, Taiwan

fYear

1991

fDate

11-12 Jun 1991

Firstpage

417

Lastpage

419

Abstract

Ar sputtering is applied to taper contact side-walls; experimental results show that metal step coverage is significantly improved as compared to conventional wet+dry contact etching without reflow. The sputtering improves the metal step coverage by rounding off the sharp corners on contact side-walls without contact CD loss nor degrading device performance. This approach is extremely useful for shallow junction formation and titanium or tungsten silicide processes which can not tolerate high temperature reflow. The depth limitation for 0.8 μm contacts on metal step coverage improvement is found to be around 1.0 um

Keywords

VLSI; argon; integrated circuit technology; metallisation; sputtering; 0.8 micron; 1 micron; Ar sputtering; VLSI; depth limitation; experimental results; metal step coverage improvement; multilevel interconnection; shallow junction formation; sharp corners rounding-off; submicron; taper contact side-walls; Argon; Degradation; Performance loss; Silicides; Sputter etching; Sputtering; Temperature; Titanium; Tungsten; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153043

Filename

153043