Selex ES GaN Technology improvements, results and R&D approach for Defense and Space application

Author

Pantellini, A. ; Lanzieri, C. ; Romanini, P. ; Nanni, A. ; Colantonio, P. ; Giannini, F. ; Limiti

Author_Institution

GaAs/GaN Foundry, Selex ES S.p.a., Rome, Italy

fYear

2014

fDate

16-18 June 2014

Firstpage

1

Lastpage

4

Abstract

The capability to control “enabling technologies” is mandatory to overcome any restrictions on exports of critical components and therefore represents a strategic condition for the companies operating in military and aerospace market. In this scenario, Selex ES Foundry has developed and optimized GaN-HEMT process for manufacturing high power HPAs and robust LNAs as request for narrow and wide band applications up to 18GHz. The technology, based on 0.25μm gate length device, represents a high performance and reliable solution and is actually in assessment for Space Qualification.

Keywords

HEMT circuits; III-V semiconductors; circuit optimisation; gallium compounds; integrated circuit manufacture; integrated circuit reliability; integrated circuit testing; low noise amplifiers; research and development; wide band gap semiconductors; GaN; HEMT process; LNA; R&D approach; Selex ES Foundry; Selex ES technology; high power HPA; narrow band applications; wide band applications; Gain; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Radio frequency; Reliability; GaN; HPA; LNA; MMICs; SiC; T/R module;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on

Conference_Location

Gdansk

Print_ISBN

978-617-607-553-0

Type

conf

DOI

10.1109/MIKON.2014.6899924

Filename

6899924