Title :
A highly integrated commercial GaAs transceiver MMIC for 2.45 GHz ISM applications
Author :
Quach, Tina ; Bonn, Fred ; Ortiz, Jeff ; Thomas, Mike
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
A highly integrated single chip 3 volt GaAs transceiver MMIC has been developed for wireless local area networks (WLAN). The multi-function chip includes a low noise amplifier (LNA), down mixer, diversity switching, transmit-receive (Tx/Rx) switching and a power amplifier (PA). The chip was fabricated based on a 3 volt GaAs MESFET implant process which was optimized for the multiple sub-circuits. The transceiver MMIC achieved excellent performance over the 2.45 GHz Industrial, Scientific and Medical (ISM) frequency band. This multi-function IC is packaged in a low cost ceramic package to meet cost goals for the commercial market. The fabricated circuits have achieved excellent performance. Typical circuits achieve 19.5 dB small signal conversion gain (antenna to mixer output) and 6 dB noise figure while consuming 12 mA with a 3 volt supply. The mixer and LNA include CMOS compatible enable/disable circuitry to conserve current during standby operation. In the transmit mode, the transceiver MMIC provides an output power of 22 dBm with greater than 50% efficiency. In addition, power control circuitry is included within the power amplifier to provide an adjustable output power and has pulse shaping circuitry to minimize spectral splatter under pulsed bias operation levels
Keywords :
CMOS integrated circuits; III-V semiconductors; MMIC; UHF mixers; UHF power amplifiers; diversity reception; gallium arsenide; power amplifiers; transceivers; wireless LAN; 12 mA; 19.5 dB; 2.45 GHz; 3 V; 6 dB; CMOS compatible enable/disable circuitry; GaAs; III V semiconductors; ISM applications; ISM frequency band; LNA; MESFET implant process; MMIC transceiver; WLAN; diversity switching; down mixer; low cost ceramic package; low noise amplifier; noise figure; output power; power amplifier; power control circuitry; pulse shaping circuitry; pulsed bias operation; small signal conversion gain; transmit mode; transmit-receive switching; wireless local area networks; Costs; Gallium arsenide; Integrated circuit packaging; Low-noise amplifiers; MMICs; Power amplifiers; Power generation; Pulse amplifiers; Transceivers; Wireless LAN;
Conference_Titel :
Wireless Communications Conference, 1997., Proceedings
Conference_Location :
Boulder, CO
Print_ISBN :
0-7803-4194-5
DOI :
10.1109/WCC.1997.622266
