DocumentCode
2381084
Title
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
Author
Gill, M. ; Lowrey, T. ; Park, J.
Author_Institution
Intel Corp., Santa Clara, CA, USA
Volume
1
fYear
2002
fDate
7-7 Feb. 2002
Firstpage
202
Abstract
The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3 V CMOS, cells from 5F/sup 2/ to 8F/sup 2/ are built in a charge-pump-free 4 Mb development vehicle. Direct overwrite, 10 ns reset times, 50 ns set times, and 1.0×10/sup 12/ cycling are achieved. At en-year data retention is projected at 120°C.
Keywords
CMOS memory circuits; VLSI; 0.18 micron; 10 ns; 10 year; 120 degC; 3 V; 4 Mbit; 50 ns; CMOS process; VLSI stand-alone memory applications; embedded applications; nonvolatile semiconductor memory technology; ovonic unified memory; phase-change memory technology; Amorphous materials; CMOS technology; Nonvolatile memory; Optical films; Optical materials; Phase change materials; Testing; Vehicles; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7335-9
Type
conf
DOI
10.1109/ISSCC.2002.993006
Filename
993006
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