Title :
Programmable single-electron transistor logic for low-power intelligent Si LSI
Author :
Uchida, K. ; Koga, J. ; Ohba, R. ; Toriumi, A.
Author_Institution :
Adv. LSI Tech Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Room-temperature-operating single-electron devices work not only as single-electron transistors (SETs) but also as nonvolatile single-electron memories. It is demonstrated that the combination of Coulomb oscillations with the nonvolatile memory functions offers high programmability for LSIs. The power and delay of a programmable SET logic are estimated.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit design; integrated logic circuits; integrated memory circuits; large scale integration; low-power electronics; power consumption; silicon; single electron transistors; CMOS FET; Coulomb oscillations; Si; intelligent Si LSI; nonvolatile single-electron memories; programmability; programmable SET logic; scaling; CMOS logic circuits; Circuit simulation; Large scale integration; MOSFETs; Nanoscale devices; Nonvolatile memory; Nonvolatile single electron memory; Single electron devices; Single electron transistors; Temperature;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.993008
