A dual-band direct-conversion/VLIF transceiver for 50GSM/GSM/DCS/PCS

Author

Dow, S. ; Ballweber, B. ; Ling-Miao Chou ; Eickbusch, D. ; Irwin, J. ; Kurtzman, G. ; Manapragada, P. ; Moeller, D. ; Paramesh, J. ; Black, G. ; Wollscheid, R. ; Johnson, K.

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

1

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

230

Abstract

This transceiver IC, fabricated in SiGe:C BiCMOS, contains dual LNAs, dual quadrature mixers, baseband filtering, RX and TX VCOs, and transmit buffers. The IC has GSM band performance of 67.5 dB gain, 2.3 dB NF, +49 dBm IIP2, -9 dBm IIP3 50 dB image rejection, and TX noise <-162 dBc/Hz at 20 MHz. This IC is part of a highly integrated low cost, GSM/GPRS platform that consists of five separate ICs.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; buffer circuits; carbon; cellular radio; mixers (circuits); radiofrequency amplifiers; radiofrequency filters; semiconductor materials; transceivers; voltage-controlled oscillators; 2.3 dB; 20 MHz; 50GSM; 67.5 dB; DCS; GSM band performance; GSM/GPRS platform; LNA; PCS; RX VCO; SiGe:C; SiGe:C BiCMOS IC; TX VCO; TX noise; VLIF transceiver; baseband filtering; dual-band direct-conversion transceiver; image rejection; low noise amplifiers; quadrature mixers; transmit buffers; very-low-intermediate frequency; Baseband; BiCMOS integrated circuits; Costs; Dual band; Filtering; GSM; Integrated circuit noise; Noise measurement; Performance gain; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.993020

Filename

993020