• DocumentCode
    2381367
  • Title

    A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability

  • Author

    Aparin, V. ; Gazzerro, P. ; Jianjun Zhou ; Bo Sun ; Szabo, S. ; Zeisel, E. ; Segoria, T. ; Ciccarelli, S. ; Persico, C. ; Narathong, C. ; Sridhara, R.

  • Author_Institution
    QUALCOMM Inc., San Diego, CA, USA
  • Volume
    1
  • fYear
    2002
  • fDate
    7-7 Feb. 2002
  • Firstpage
    234
  • Abstract
    A 0.5 μm SiGe BiCMOS single-chip receiver integrates three front-ends (LNA, RF-to-IF mixer, VGA) for the cellular, PCS/IMT and GPS frequency bands, a shared I/Q demodulator, IF VCO, and UHF LO buffers. It has 2.0 dB NF and -0.6 dBm IIP3 in the cellular CDMA mode and 2.3 dB NF and -7 dBm IIP3 in the PCS mode with <150 mW at 3 V.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; Global Positioning System; cellular radio; code division multiple access; personal communication networks; radio receivers; semiconductor materials; 0.5 micron; 150 mW; 2 dB; 2.3 dB; 3 V; BiCMOS RF-to-baseband receiver; GPS capability; IF VCO; LNA; PCS/IMT frequency bands; RF-to-IF mixer; SiGe; SiGe BiCMOS single-chip receiver; UHF LO buffers; VGA; cellular frequency bands; quad-mode receiver; shared I/Q demodulator; tri-band receiver; wideband CDMA; wireless CDMA/WCDMA/AMPS applications; BiCMOS integrated circuits; Demodulation; Frequency; Germanium silicon alloys; Global Positioning System; Multiaccess communication; Noise measurement; Personal communication networks; Silicon germanium; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7335-9
  • Type

    conf

  • DOI
    10.1109/ISSCC.2002.993022
  • Filename
    993022