Title :
Highly-integrated SiGe BiCMOS WCDMA transmitter IC
Author :
Bellaouar, A. ; Frechette, M. ; Fridi, A.R. ; Embabi, S.H.K.
Author_Institution :
RF Design Group, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A highly-integrated SiGe BiCMOS WCDMA transmitter IC consists of VHF, UHF chains, and synthesizers. At 6 dBm output power, it consumes 79 mA at 2.7 V, with a 5% r.m.s. EVM and -42 dBc ACLR at 5 MHz offset. In-band and receive-band output noise are -128 and -135 Bm/Hz, respectively. Fully integrated PLLs use on-chip VCO tanks and require no off-chip loop filters.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; code division multiple access; radio transmitters; semiconductor materials; 1520 to 2360 MHz; 2.7 V; 79 mA; SiGe BiCMOS transmitter ICs; SiGe RF BiCMOS process; UHF chain; VHF chain; WCDMA transmitter ICs; integrated PLLs; onchip VCO tanks; synthesizers; wideband CDMA; BiCMOS integrated circuits; Germanium silicon alloys; Integrated circuit noise; Integrated circuit synthesis; Multiaccess communication; Power generation; Silicon germanium; Synthesizers; Transmitters; UHF integrated circuits;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.993024
