• DocumentCode
    2381579
  • Title

    A study on the removal of silicon native oxide for ULSI devices

  • Author

    Choi, Song-Ho ; Jeong, Kwang-Jin ; Choi, Jin-Sik ; Koo, Kyong-Wan ; Cho, Tong-Yul ; Chun, Hui-Gon

  • Author_Institution
    KoMiCo, Ansong, South Korea
  • Volume
    3
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    381
  • Abstract
    In UV-excited F2+H2 dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F2+H2 dry cleaning, was defined by confirming the reduction of Kelvin resistance
  • Keywords
    ULSI; contact resistance; elemental semiconductors; photochemistry; silicon; sputter etching; surface chemistry; surface cleaning; ultraviolet radiation effects; AFM; BSG film; Kelvin resistance reduction; PSG film; Si; TEOS film; ULSI devices; UV-excited dry cleaning; XPS; contact holes; etch rate; etching mechanism; selective etching; silicon native oxide removal; silicon wafers; surface chemical reaction; surface roughness; thermal oxide film; Cleaning; Contact resistance; Dry etching; Gases; Kelvin; Rough surfaces; Silicon; Surface roughness; Surface treatment; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on
  • Conference_Location
    Ulsan
  • Print_ISBN
    0-7803-6486-4
  • Type

    conf

  • DOI
    10.1109/KORUS.2000.866118
  • Filename
    866118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2381579