Title :
A study on the removal of silicon native oxide for ULSI devices
Author :
Choi, Song-Ho ; Jeong, Kwang-Jin ; Choi, Jin-Sik ; Koo, Kyong-Wan ; Cho, Tong-Yul ; Chun, Hui-Gon
Author_Institution :
KoMiCo, Ansong, South Korea
Abstract :
In UV-excited F2+H2 dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F2+H2 dry cleaning, was defined by confirming the reduction of Kelvin resistance
Keywords :
ULSI; contact resistance; elemental semiconductors; photochemistry; silicon; sputter etching; surface chemistry; surface cleaning; ultraviolet radiation effects; AFM; BSG film; Kelvin resistance reduction; PSG film; Si; TEOS film; ULSI devices; UV-excited dry cleaning; XPS; contact holes; etch rate; etching mechanism; selective etching; silicon native oxide removal; silicon wafers; surface chemical reaction; surface roughness; thermal oxide film; Cleaning; Contact resistance; Dry etching; Gases; Kelvin; Rough surfaces; Silicon; Surface roughness; Surface treatment; Ultra large scale integration;
Conference_Titel :
Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on
Conference_Location :
Ulsan
Print_ISBN :
0-7803-6486-4
DOI :
10.1109/KORUS.2000.866118
