DocumentCode :
2381605
Title :
Using PCM in Next-generation Embedded Space Applications
Author :
Ferreira, Alexandre P. ; Childers, Bruce ; Melhem, Rami ; Mosse, Daniel ; Yousif, Mazin
Author_Institution :
Univ. of Pittsburgh, Pittsburgh, PA, USA
fYear :
2010
fDate :
12-15 April 2010
Firstpage :
153
Lastpage :
162
Abstract :
Dynamic RAM (DRAM) has been the best technology for main memory for over thirty years. In embedded space applications, radiation hardened DRAM is needed because gamma rays cause transient errors; such rad-hard memories are extremely expensive and power hungry, leading to lower life (or increased battery weight) for satellite and other devices operating in space. Despite these problems, DRAM has been the technology of choice because it has better performance and it scales well. New, more energy efficient, non-volatile, scalable, radiation resistant memory technologies are now available, namely phase-change memory (PCM), making the DRAM choice much less compelling. However, current approaches require changes to PCM device internal circuitry, the operating system and/or the CPU cache-memory organization/interface. This paper presents a new, practical, detailed architecture, called PMMA, to effectively use PCM for main memory in next-generation embedded space systems. We designed PMMA avoiding changes to commodity PCM devices, the operating system, and the existing CPU cache-memory interface, enabling plug-in replacement of a conventional DRAM main memory by one constructed with PMMA. Our architecture incorporates novel mechanisms to address PCM´s limitations including expensive write operations, asymmetric read/write latency, and limited endurance. In our evaluation we show that PMMA achieves a 60% improvement in energy-delay over a conventional DRAM main memory.
Keywords :
embedded systems; radiation hardening (electronics); random-access storage; space vehicle electronics; CPU cache-memory interface; CPU cache-memory organization; DRAM main memory; PCM device internal circuitry; PMMA; dynamic RAM; gamma rays; next-generation embedded space application; nonvolatile memory technology; operating system; phase-change memory; rad-hard memories; radiation hardened DRAM; radiation resistant memory technology; scalable memory technology; transient errors; Batteries; DRAM chips; Energy efficiency; Gamma rays; Operating systems; Phase change materials; Radiation hardening; Random access memory; Satellites; Space technology; computer architecture; embedded; space;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Real-Time and Embedded Technology and Applications Symposium (RTAS), 2010 16th IEEE
Conference_Location :
Stockholm
ISSN :
1080-1812
Print_ISBN :
978-1-4244-6690-0
Electronic_ISBN :
1080-1812
Type :
conf
DOI :
10.1109/RTAS.2010.40
Filename :
5465975
Link To Document :
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